【IRF3709 Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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The following offer records may have been changed. To search for latest offer, please click Get Latest Offer
Part Number:

IRF3709

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 90A TO-220AB

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

41nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

2672pF @ 16V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.1W (Ta), 120W (Tc)

Rds On (Max) @ Id, Vgs:

9 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
IRF3709
 Part NumberBrandD/CQtyCompany

IRF3709

IR5000Digchip Technology Co.,Limited   4

IRF3709

Infineon Technologies1000MY Group (Asia) Limited   14
Warranty

IRF3709

IR13+13800A & C Int'l Electronics Co.    12
Warranty

IRF3709

IR2016+2000Shenzhen Everbell Technology Co.Ltd   13

IRF3709

IR13508Xia Song Electronics Co., Limited   12

Related Part Number

IRF3708PBF | IRF3708S | IRF3708SPBF | IRF3708STRR | IRF3709L | IRF3709LPBF | IRF3709PBF | IRF3709S | IRF3709SPBF
IRF3709 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOEIP]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRF3709 Related Keywords in 2019 USA

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