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【IRF9540N/】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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DATASHEET May 13, 1998 IRF9540N . HEXFET Power MOSFET. PD - 91437B. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -23. Mar 11, 2003 Uses IRF9540N data and test conditions. Source-Drain Ratings and Characteristics. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Mar 16, 1998 Uses IRF9540N data and test conditions. Pulse width 300 s; duty cycle 2%. Source-Drain Ratings and Characteristics. A. -15. -76. S. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IRF9540NPBF

IRF9540NPBF  15+ 421China
YTD TECHNOLOGY (HK) CO., LIMITED E-Catalog 1st Year Member

IRF9540S

IRF9540S  IR 2015+N/A 1000Hong Kong
Hong Kong Red Top Boat Development Co., Limited E-Catalog 1st Year Member

IRF9540NPBF

IRF9540NPBF  new and origina... 5000
In-Stock
China
Royal Chip Technology Co., Limited E-Catalog 1st Year Member

IRF9540

IRF9540  IR 16+T0220-3 20000China
APEX ELECTRONICS CO., LIMITED E-Catalog 3rd Year Member

IRF9540

IRF9540  IR 14+ 10000China
SHIJIa BAIKE (HK) ELECTRONICS LIMITED E-Catalog 1st Year Member

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DATASHEET May 13, 1998 IRF9540N . HEXFET Power MOSFET. PD - 91437B. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -23. Mar 11, 2003 Uses IRF9540N data and test conditions. Source-Drain Ratings and Characteristics. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Mar 16, 1998 Uses IRF9540N data and test conditions. Pulse width 300 s; duty cycle 2%. Source-Drain Ratings and Characteristics. A. -15. -76. S. HKinDataSheet_ZO1GOSIT
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