| Part Number: | IRFH5110TR2PBF |
| Product Name: | IRFH5110TR2PBF Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IRFH5110TR2PBF |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 100V 5X6 PQFN |
| Series: | HEXFET |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 63A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3152pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 3.6W (Ta), 114W (Tc) |
| Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 37A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PQFN (5x6) |
| Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
Part NO. : IRFH5110TR2PBF
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IRFH5110TR2PBF
Brand : INFINEON
Date Code : 22+
Qty : 55300
USD 0
Part NO. :
IRFH5110TR2PBF
Brand : IR
Date Code :
Qty : 329
USD 0
Part NO. : IRFH5110TR2PBF
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : IRFH5110TR2PBF
Brand : IR
Date Code :
Qty : 13280
USD 0
Part NO. : IRFH5110TR2PBF
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IRFH5110TR2PBF
Brand : INFINEON
Date Code : 22+
Qty : 55300
USD 0
Part NO. :
IRFH5110TR2PBF
Brand : IR
Date Code :
Qty : 329
USD 0
Part NO. : IRFH5110TR2PBF
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : IRFH5110TR2PBF
Brand : IR
Date Code :
Qty : 13280
USD 0
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