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【IRLR3714Z Transistors - FETs, MOSFETs - Single IR】【18252903】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRLR3714Z

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 20V 37A DPAK

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

560pF @ 10V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

35W (Tc)

Rds On (Max) @ Id, Vgs:

15 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D-Pak

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

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Part NumberPart Number BrandD/CQtyCountry /
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Company
STRCWarranty

IRLR3714Z

IRLR3714Z IR16+60000Taiwan
Yingxinyuan INT'L (Group) Limited  15

IRLR3714Z

IRLR3714Z IR08+24300China
Hong Kong In Fortune Electronics Co., Limited  13

IRLR3714Z

IRLR3714Z IR07+20000China
Far East Electronics Technology Limited  12

IRLR3714Z

IRLR3714Z Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

IRLR3714Z

IRLR3714Z IR12+10950China
Sino Star Electronics (HK) Co.,Limited 12
Warranty

182529-

182529- 137USA
Chip 1 Exchange USA, Inc.  1

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18252903 | IRLR3714TR | HIP0082AS2 | IRLR3714TRL | HIP1011BCBZA | IRLR3714TRPBF | IRLR3714ZPBF | HIP3246 | IRLR3714ZTRPBF | IRLR3715
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