【IXFH15N100 Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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The following offer records may have been changed. To search for latest offer, please click Get Latest Offer
Part Number:

IXFH15N100

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 1000V 15A TO-247

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C:

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

220nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4500pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

360W (Tc)

Rds On (Max) @ Id, Vgs:

700 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD (IXFH)

Package / Case:

TO-247-3

1 - 5 of 5 Record(s)
IXFH15N100
 Part NumberBrandD/CQtyCompany

IXFH15N100

IXYS00+2365Xinye International Technology Limited    9

IXFH15N100

IXYS1000MY Group (Asia) Limited    13
Warranty

IXFH15N100

IXYS13+13800A & C Int'l Electronics Co.    11

IXFH15N100

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

IXFH15N100

IXYS17+1500Dopoint Hi-Tech Limited   14

Related Part Number

IXFH15N100P | IXFH15N100Q | IXFH150N17T2 | IXFH150N20T | IXFH15N100P | IXFH15N100Q | IXFH15N100Q3 | IXFH15N60 | IXFH15N80 | IXFH15N80Q | IXFH160N15T
IXFH15N100 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIIIS]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXFH15N100 Related Keywords in 2018 USA

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