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【IXFN320N17T2】【Transistors - FETs, MOSFETs - Single】【IXYS】【IXYS POWER】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFN320N17T2

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 170V 260A SOT227

Series:

GigaMOS

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

170V

Current - Continuous Drain (Id) @ 25°C:

260A

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs:

640nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

45000pF @ 25V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

1070W (Tc)

Rds On (Max) @ Id, Vgs:

5.2 mOhm @ 60A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

SOT-227B

Package / Case:

SOT-227-4, miniBLOC

Search For IXFN320N17T2 - IXFN320N17T2 Product Information : 

Resistors, Inductors, Sensors
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
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Company

IXFN320N17T2

IXFN320N17T2  IXYS 2015+SOT-227 670China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IXFN320N17T2

IXFN320N17T2  IXYS 14000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXFN320N17T2

IXFN320N17T2  IXYS Module 5395Hong Kong
E-Core Electronics Co. E-Catalog 9th Year Member

IXFN320N17T2

IXFN320N17T2  IXYS POWER 17+Active Part 500China
North Star Technology (HK) Co.,Ltd E-Catalog 1st Year Member

IXFN32N100P

IXFN32N100P  IXYS 2015+ 1000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

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