Part Number: | IXFN32N60 |
Product Name: | IXFN32N60 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IXFN32N60 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | IXYS |
Description: | MOSFET N-CH 600V 32A SOT-227 |
Series: | HiPerFET |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 32A |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 325nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 520W (Tc) |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 500mA, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
Company | Part Number | Qty |
IXFN32N60
IXYS |
1000 USD 0 |
|
IXFN32N60
IXYS 2021+ |
30000 USD 0 |
|
IXFN32N60
IXYS 2013+ |
5000 USD 0 |
|
IXFN32N60
IXYS 18+ |
350 USD 0 |
|
IXFN32N60
IXYS 20+ |
16000 USD 0 |
|
IXFN32N60
IXYS |
1000 USD 0 |
|
IXFN32N60
IXYS 2021+ |
30000 USD 0 |
|
IXFN32N60
IXYS 2013+ |
5000 USD 0 |
|
IXFN32N60
IXYS 18+ |
350 USD 0 |
|
IXFN32N60
IXYS 20+ |
16000 USD 0 |