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【JAN2N6796 Transistors - FETs, MOSFETs - Single IR】【2800019】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

JAN2N6796

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Microsemi Corporation

Description:

MOSFET N-CH TO-205AF TO-39

Series:

Military, MIL-PRF-19500/557

Packaging:

Bulk

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

28.51nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

800mW (Ta), 25W (Tc)

Rds On (Max) @ Id, Vgs:

195 mOhm @ 8A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-39

Package / Case:

TO-205AF Metal Can

Search For JAN2N6796 - JAN2N6796 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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JAN2N6796

JAN2N6796 IR05+1500China
Abundant (HK) International Electronics Limited  6

JAN2N6796

JAN2N6796 2000China
Novelty Electronics Limited 9

JAN2N6796

JAN2N6796 IR05+1500China
Goodbest International Holding Limited 5

JAN2N6796

JAN2N6796 INTERSIL1000China
HK Niuhuasi Technology Limited  8

JAN2N6796

JAN2N6796 IR1500China
Well Rich Trading Group Limited  9

280001-9

280001-9 TE2015+35000China
Bonase Electronics (HK) Co., Limited  13

280001-9

280001-9 TE18+10000China
Hk Guoyuan Electronics Technology Limited  9

280001-9

280001-9 34594France
FantastIC Sourcing 14
Warranty

280001-9

280001-9 27153USA
Chip 1 Exchange USA, Inc.  2

280001-9

280001-9 21000Hong Kong
Lungke Electronics Technology Co., Limited  8

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2800019 | JAN2N5238 | JAN2N5745 | IDT7164S150TCB | IDT7164S15P | JAN2N6052 | AQ12EA6R8CAJME | JAN2N6901 | JAN65 | JAN723T
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