【MGF0913A MITSUBISH】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA
MGF0913A DescriptionThe MGF0913A GaAs FET with an N-channel schottky. Gate, is designed for use L & S band amplifiers. FEATURES. High output power. Po=31dBm(TYP.) Mar 2, 2007 RF Characteristic of MGF0913A in 800 to 900 MHz-band. IDQ ( A ). Freq. Input Signal. CW. Signal. CW. Modulated. ( MHz ). Ta = 25 deg. C. O. G. MGF2415S. G. MGFC36V5258S. G. NEW. MGF0911A. G. MGF2430A. G. MGFC36V5867. G. MGF0912A. G. MGF2430AV. G. MGFC36V5964A. G. MGF0913A . Page 1. 1. Technical Brief 347. Tape and Reel Specification for Integrated Circuits. Introduction. Many Surface Mounted Devices (SMDs) are being MGF0913A . MGF0920A. MGF0918A. MGF2445A. MGF0911A. MGF0907B . MGF0913A . MGF0915A. MGF0918A. MGF0920A. MGF0921A. MGF0951P.
| ||Part Number||Brand||D/C||Qty||Company|
|MITSUBISH||9952||55||CHIPMALL ELECTRONICS LIMITED || || ||3|
|MIT||15/16+||400||Tide Electronic Co.,Limited || || ||9|
|MITSUBISHI||16+||5000||ShenZhen HuaXingWei Electronics Co., Ltd. || || ||2|
|MITSUBISHI||115||WIN AND WIN ELECTRONICS LIMITED || || ||1|
|MITSUBI||15+||350||Ande Electronics Co., Limited || || ||12|
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