Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
TRANS NPN 400V 12A TO220AB
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Current - Collector Cutoff (Max):
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5A, 5V
Power - Max:
Frequency - Transition:
-65Â°C ~ 150Â°C (TJ)
Package / Case:
Supplier Device Package:
Search For MJE13009 - MJE13009 Product Information :
MJE13009 The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and SILICON NPN TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13008 and. MJE13009 are silicon NPN transistors designed for high. The UTC MJE13009 -Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and . MJE13009 . RoHS . FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ...
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