Part Number: | PDTD113ZS126 |
Product Name: | PDTD113ZS126 Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | PDTD113ZS126 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | NXP USA Inc. |
Description: | TRANS PREBIAS NPN 500MW TO92-3 |
Series: | - |
Packaging: | Tape & Box (TB) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 1k |
Resistor - Emitter Base (R2) (Ohms): | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | - |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Part Number
Brand
D/C
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Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code :
Qty : 8000
USD 0
Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code : 22+
Qty : 32000
USD 0
Part NO. : PDTD113ZS,126
Brand :
Date Code : 21+
Qty : 6000
USD 0
Part NO. : PDTD113ZS,126
Brand :
Date Code : 22+
Qty : 1000
USD 0
Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code :
Qty : 8000
USD 0
Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code :
Qty : 8000
USD 0
Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code : 22+
Qty : 32000
USD 0
Part NO. : PDTD113ZS,126
Brand :
Date Code : 21+
Qty : 6000
USD 0
Part NO. : PDTD113ZS,126
Brand :
Date Code : 22+
Qty : 1000
USD 0
Part NO. : PDTD113ZS,126
Brand : NXP USA Inc.
Date Code :
Qty : 8000
USD 0