Part Number: | PSMN8R5108ESQ |
Product Name: | PSMN8R5108ESQ Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | PSMN8R5108ESQ |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | NXP USA Inc. |
Description: | MOSFET N-CH 108V 100A I2PAK |
Series: | - |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 108V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 111nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5512pF @ 50V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 263W (Tc) |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 25A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Part Number
Brand
D/C
Qty
Part NO. : PSMN8R5-108ESQ
Brand : ST
Date Code : 2023+
Qty : 3639
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP USA Inc.
Date Code :
Qty : 1000
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP
Date Code : 2022+
Qty : 48837
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP USA Inc.
Date Code : 21+
Qty : 81630
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : ST
Date Code : 2023+
Qty : 3639
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP USA Inc.
Date Code :
Qty : 1000
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP
Date Code : 2022+
Qty : 48837
USD 0
Part NO. : PSMN8R5-108ESQ
Brand : NXP USA Inc.
Date Code : 21+
Qty : 81630
USD 0