Part Number: | RN1103MFVL3F |
Product Name: | RN1103MFVL3F Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1103MFVL3F |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 150MW VESM |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 22k |
Resistor - Emitter Base (R2) (Ohms): | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | - |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
Part Number
Brand
D/C
Qty
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA
Date Code :
Qty : 68287
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA/
Date Code : 2022
Qty : 18287
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA
Date Code : 10+
Qty : 7287
USD 0
Part NO. : RN1103MFV,L3F
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA/
Date Code :
Qty : 18287
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA
Date Code :
Qty : 68287
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA/
Date Code : 2022
Qty : 18287
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA
Date Code : 10+
Qty : 7287
USD 0
Part NO. : RN1103MFV,L3F
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1103MFV,L3F
Brand : TOSHIBA/
Date Code :
Qty : 18287
USD 0