Part Number: | RN1110 |
Product Name: | RN1110 Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1110 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.1W SSM |
Series: | - |
Packaging: | |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 4.7k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
Part Number
Brand
D/C
Qty
Part NO. : RN1110
Brand : TOSHIBA
Date Code : 17+
Qty : 123000
USD 0
Part NO. : RN1110(TE85L)
Brand : TOSHIBA/
Date Code :
Qty : 13000
USD 0
Part NO. : RN1110
Brand : TOSHIBA
Date Code :
Qty : 149889
USD 0
Part NO. : RN1110
Brand : TOSHIBA
Date Code : 0417+
Qty : 3000
USD 0
Part NO. : RN1110
Brand : TOSHIBA
Date Code : 17+
Qty : 123000
USD 0
Part NO. : RN1110(TE85L)
Brand : TOSHIBA/
Date Code :
Qty : 13000
USD 0
Part NO. : RN1110
Brand : TOSHIBA
Date Code :
Qty : 149889
USD 0
Part NO. : RN1110
Brand : TOSHIBA
Date Code : 0417+
Qty : 3000
USD 0