Part Number: | RN1444ATE85LF |
Product Name: | RN1444ATE85LF Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1444ATE85LF |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.2W S-MINI |
Series: | - |
Packaging: | |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Resistor - Base (R1) (Ohms): | 2.2k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 4mA, 2V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 30MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
Part Number
Brand
D/C
Qty
Part NO. : RN1444ATE85LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1444ATE85LF
Brand : TOSHIBA
Date Code :
Qty : 800
USD 0
Part NO. : RN1444ATE85LF
Brand : TOSHIBA
Date Code : 22+
Qty : 35800
USD 0
Part NO. : RN1444ATE85LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1444ATE85LF
Brand : Toshiba
Date Code : 22+
Qty : 35800
USD 0
Part NO. : RN1444ATE85LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1444ATE85LF
Brand : TOSHIBA
Date Code :
Qty : 800
USD 0
Part NO. : RN1444ATE85LF
Brand : TOSHIBA
Date Code : 22+
Qty : 35800
USD 0
Part NO. : RN1444ATE85LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1444ATE85LF
Brand : Toshiba
Date Code : 22+
Qty : 35800
USD 0