Part Number: | RN1910FE |
Product Name: | RN1910FE Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Merchant-Specific Identifier: | RN1910FE |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 4.7k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
Part Number
Brand
D/C
Qty
Part NO. : RN1910F-E
Brand : TOSHIBA/
Date Code :
Qty : 13000
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA/
Date Code : 22+
Qty : 98878
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA/
Date Code : 2022
Qty : 97758
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA
Date Code :
Qty : 7972
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA
Date Code : 14+
Qty : 60000
USD 0
Part NO. : RN1910F-E
Brand : TOSHIBA/
Date Code :
Qty : 13000
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA/
Date Code : 22+
Qty : 98878
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA/
Date Code : 2022
Qty : 97758
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA
Date Code :
Qty : 7972
USD 0
Part NO. : RN1910FE
Brand : TOSHIBA
Date Code : 14+
Qty : 60000
USD 0