| Part Number: | RN1965 |
| Product Name: | RN1965 Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Merchant-Specific Identifier: | RN1965 |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS 2NPN PREBIAS 0.2W US6 |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 2.2k |
| Resistor - Emitter Base (R2) (Ohms): | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | US6 |
Part Number
Brand
D/C
Qty
Part NO. : RN1965
Brand : TOSHIBA/
Date Code :
Qty : 40000
USD 0
Part NO. : RN1965
Brand : TOSHIBA
Date Code : 21+
Qty : 8000
USD 0
Part NO. : RN1965
Brand : TOSHIBA
Date Code : 03+
Qty : 30000
USD 0
Part NO. : RN1965(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1965
Brand : ST
Date Code :
Qty : 10521
USD 0
Part NO. : RN1965
Brand : TOSHIBA/
Date Code :
Qty : 40000
USD 0
Part NO. : RN1965
Brand : TOSHIBA
Date Code : 21+
Qty : 8000
USD 0
Part NO. : RN1965
Brand : TOSHIBA
Date Code : 03+
Qty : 30000
USD 0
Part NO. : RN1965(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN1965
Brand : ST
Date Code :
Qty : 10521
USD 0
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