| Part Number: | RN2101ACT |
| Product Name: | RN2101ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN2101ACT |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS PNP 0.1W CST3 |
| Series: | - |
| Packaging: | |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 4.7k |
| Resistor - Emitter Base (R2) (Ohms): | 4.7k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
Part NO. : RN2101ACT(TPL3)
Brand : TOSHIBA/
Date Code :
Qty : 10001
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN2101ACT
Brand : TOSHIBA/
Date Code :
Qty : 100000
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : TOSHIBA
Date Code : 22+
Qty : 35200
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : TOSHIBA/
Date Code :
Qty : 10001
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN2101ACT
Brand : TOSHIBA/
Date Code :
Qty : 100000
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : TOSHIBA
Date Code : 22+
Qty : 35200
USD 0
Part NO. : RN2101ACT(TPL3)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
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