Part Number: | RN2963FE |
Product Name: | RN2963FE Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Merchant-Specific Identifier: | RN2963FE |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
Series: | - |
Packaging: | |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 22k |
Resistor - Emitter Base (R2) (Ohms): | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
Part Number
Brand
D/C
Qty
Part NO. : RN2963FE(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN2963FE
Brand : TOSHIBA/
Date Code :
Qty : 62000
USD 0
Part NO. : RN2963FE(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code : 2023+
Qty : 58338
USD 0
Part NO. : RN2963FE(TE85L,F)
Brand :
Date Code :
Qty : 761
USD 0
Part NO. : RN2963FE
Brand : TOSHIBA
Date Code : 21+
Qty : 8000
USD 0
Part NO. : RN2963FE(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : RN2963FE
Brand : TOSHIBA/
Date Code :
Qty : 62000
USD 0
Part NO. : RN2963FE(TE85L,F)
Brand : Toshiba Semiconductor and Storage
Date Code : 2023+
Qty : 58338
USD 0
Part NO. : RN2963FE(TE85L,F)
Brand :
Date Code :
Qty : 761
USD 0
Part NO. : RN2963FE
Brand : TOSHIBA
Date Code : 21+
Qty : 8000
USD 0