Part Number: | SI2301BDST1GE3 |
Product Name: | SI2301BDST1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI2301BDST1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 20V 2.2A SOT23-3 |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 375pF @ 6V |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.8A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY
Date Code : 1032+
Qty : 1440
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY/
Date Code : 22+
Qty : 44564
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY
Date Code : 21+
Qty : 55455
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 43444
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY
Date Code : 1032+
Qty : 1440
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY/
Date Code : 22+
Qty : 44564
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY
Date Code : 21+
Qty : 55455
USD 0
Part NO. : SI2301BDS-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 43444
USD 0