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Home > Part Number Index > Index 23 > Product (Page: 3685) > SI2303CDST1GE3

What is SI2303CDST1GE3?

Part Number: SI2303CDST1GE3
Product Name: SI2303CDST1GE3 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI2303CDST1GE3
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Series: TrenchFET
Packaging: Cut Tape (CT)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Rated 4/5 based on 4 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI2303CDST1GE3

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Part Number

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Part NO. : SI2303CDS-T1-GE3

Brand : VISHAY  

Date Code : 2021

Qty : 3000

Unit Price :
(USD)
USD 0

Part NO. : SI2303CDS-T1-GE3

Brand : VISHAY  

Date Code : 22+

Qty : 33000

Unit Price :
(USD)
USD 0

Part NO. : SI2303CDS-T1-GE3

Brand : VISHAY  

Date Code : 21+CN

Qty : 3730

Unit Price :
(USD)
USD 0

Part NO. : SI2303CDS-T1-GE3

Brand : VISHAY  

Date Code : 1514

Qty : 5600

Unit Price :
(USD)
USD 0

Part NO. : SI2303CDS-T1-GE3

Brand : VISHAY  

Date Code : 21+

Qty : 60

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