| Part Number: | SI2338DST1GE3 |
| Product Name: | SI2338DST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2338DST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 30V 6A SOT23 |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 424pF @ 15V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.3W (Ta), 2.5W (Tc) |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 5.5A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY(威世)
Date Code : 23+
Qty : 69000
Unit Price :
(USD)
USD
0
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code : 13+PB
Qty : 29000
Unit Price :
(USD)
USD
0
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code : 2023+
Qty : 185000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code :
Qty : 10390
USD 0
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code :
Qty : 180
USD 0
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code :
Qty : 10390
USD 0
Part NO. : SI2338DS-T1-GE3
Brand : VISHAY
Date Code :
Qty : 180
USD 0
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