| Part Number: | SI2356DST1GE3 |
| Product Name: | SI2356DST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2356DST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 40V 4.3A SOT-23 |
| Series: | TrenchFET |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 20V |
| Vgs (Max): | ±12V |
| FET Feature: | - |
| Power Dissipation (Max): | 960mW (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs: | 51 mOhm @ 3.2A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-236 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2356DS-T1-GE3
Brand : VISHAY
Date Code :
Qty : 30000
Unit Price :
(USD)
USD
0
Part NO. : SI2356DS-T1-GE3
Brand : VISHAY
Date Code : 21+/22+
Qty : 10000
Unit Price :
(USD)
USD
0
Part NO. : SI2356DS-T1-GE3
Brand : DIODES
Date Code : 22+
Qty : 6000
Unit Price :
(USD)
USD
0
Part NO. : SI2356DS-T1-GE3
Brand : Vishay Semiconductors
Date Code : 21
Qty : 9000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI2356DS-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 4868000
USD 0
Part NO. : SI2356DS-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 4868000
USD 0
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