| Part Number: | SI2365EDST1GE3 |
| Product Name: | SI2365EDST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2365EDST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 20V 5.9A TO-236 |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Vgs (Max): | ±8V |
| FET Feature: | - |
| Power Dissipation (Max): | 1W (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 4A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-236 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2365EDS-T1-GE3
Brand : VISHAY
Date Code : 22+
Qty : 9973
Unit Price :
(USD)
USD
0
Part NO. : SI2365EDS-T1-GE3
Brand : VISHAY
Date Code : 20+
Qty : 3500
Unit Price :
(USD)
USD
0
Part NO. : SI2365EDS-T1-GE3
Brand : VISHAY
Date Code : 2023+
Qty : 185000
Unit Price :
(USD)
USD
0
Part NO. : SI2365EDS-T1-GE3
Brand : VISHAY
Date Code : 21+/22+
Qty : 10000
Unit Price :
(USD)
USD
0
Part NO. : SI2365EDS-T1-GE3
Brand : VISHAY
Date Code : 22
Qty : 15000
Unit Price :
(USD)
USD
0
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