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【SI4178DYT1E3 Transistors - FETs, MOSFETs - Single VISHAY】【DG409GY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4178DYT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 12A 8SO

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

405pF @ 15V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.4W (Ta), 5W (Tc)

Rds On (Max) @ Id, Vgs:

21 mOhm @ 8.4A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Search For SI4178DYT1E3 - SI4178DYT1E3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI4178DY-T1-E3

SI4178DY-T1-E3 VISHAY1103+2500Hong Kong
JFJ Electronics Co.,Limited  13
STRC

SI4178DY-T1-E3

SI4178DY-T1-E3 VISHAY2016+850000China
Far East Electronics Technology Limited  12
STRC

SI4178DY-T1-E3

SI4178DY-T1-E3 VISHAY12+2500China
Sino Star Electronics (HK) Co.,Limited 11
Warranty

SI4178DY-T1-E3

SI4178DY-T1-E3 IC13+122560China
HK TWO L ELECTRONIC LIMITED  7

SI4178DY-T1-E3

SI4178DY-T1-E3 VISHAY2010+4238Hong Kong
Asia Components Co.,Limited 11

DG409GY

DG409GY AD16+20000China
APEX ELECTRONICS CO., LIMITED 3

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