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【SI7218DNT1GE3 Transistors - FETs, MOSFETs - Arrays VISHAY】【IM2113G】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI7218DNT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET 2N-CH 30V 24A 1212-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Dual)

FET Feature:

Standard

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

24A

Rds On (Max) @ Id, Vgs:

25 mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

700pF @ 15V

Power - Max:

23W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

PowerPAK 1212-8 Dual

Supplier Device Package:

PowerPAK 1212-8 Dual

Search For SI7218DNT1GE3 - SI7218DNT1GE3 Product Information : 

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1 - 10 of 10 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI7218DN-T1-GE3

SI7218DN-T1-GE3 VISHAY359Singapore
Splendent Technologies Pte Ltd  4

SI7218DN-T1-GE3

SI7218DN-T1-GE3 Vishay Semiconductors42483Hong Kong
HongKong Wanghua Technology Limited 4

SI7218DN-T1-GE3

SI7218DN-T1-GE3 359China
Hong Kong In Fortune Electronics Co., Limited  13
Warranty

SI7218DN-T1-GE3

SI7218DN-T1-GE3 VISHAY06+655China
HK TWO L ELECTRONIC LIMITED  7

SI7218DN-T1-GE3

SI7218DN-T1-GE3 VISHAY12+937Hong Kong
Asia Components Co.,Limited 11

IM2113G.

IM2113G. IM10+22274China
Ande Electronics Co., Limited  12

IM2113G

IM2113G IM22324China
Top Electronics Co.,  12

IM2113G

IM2113G IM2015+21274China
Bonase Electronics (HK) Co., Limited  12
Warranty

IM2113G

IM2113G IM10+23565China
HK TWO L ELECTRONIC LIMITED  7

IM2113G

IM2113G IM1428+21274USA
COOPIC INC1

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IM2113G | CL32A226KPJNNNE | CL32A226KQJNNNE | CL32A226MOJNNNE | SI7218DNT1E3 | CL32A226MPJNNNE | 688000795 | AT2512510UI27 | SI7220DNT1E3 | SI7220DNT1GE3
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