| Part Number: | SI7900AEDNT1GE3 |
| Product Name: | SI7900AEDNT1GE3 Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | SI7900AEDNT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | Vishay Siliconix |
| Description: | MOSFET 2N-CH 20V 6A PPAK 1212-8 |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | 2 N-Channel (Dual) Common Drain |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Power - Max: | 1.5W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | PowerPAK 1212-8 Dual |
| Supplier Device Package: | PowerPAK 1212-8 Dual |
Part Number
Brand
D/C
Qty
Part NO. : SI7900AEDN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 36089
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : VISH
Date Code : 1908
Qty : 2876
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : VISH
Date Code : 1421
Qty : 960
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 55200
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 36089
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : VISH
Date Code : 1908
Qty : 2876
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : VISH
Date Code : 1421
Qty : 960
USD 0
Part NO. : SI7900AEDN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 55200
USD 0
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