Part Number: | SI8800EDBT2E1 |
Product Name: | SI8800EDBT2E1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI8800EDBT2E1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 20V MICROFOOT |
Series: | TrenchFET |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-Microfoot |
Package / Case: | 4-XFBGA, CSPBGA |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY/威世
Date Code : 13+
Qty : 50000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY/
Date Code : 22+
Qty : 75351
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY()
Date Code : 21+
Qty : 17690
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY
Date Code : 13+
Qty : 3355
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY
Date Code :
Qty : 3000
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY/
Date Code : 22+
Qty : 75351
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY()
Date Code : 21+
Qty : 17690
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY
Date Code : 13+
Qty : 3355
USD 0
Part NO. : SI8800EDB-T2-E1
Brand : VISHAY
Date Code :
Qty : 3000
USD 0