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Home > Part Number Index > Index 15 > Product (Page: 3448) > SI9926BDYT1E3

What is SI9926BDYT1E3?

Part Number: SI9926BDYT1E3
Product Name: SI9926BDYT1E3 Transistors - FETs, MOSFETs - Arrays
Merchant-Specific Identifier: SI9926BDYT1E3
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Brand: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
Series: TrenchFET
Packaging:
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.14W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Rated 4/5 based on 6 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

SI9926BDYT1E3

This is a cached page collected on 2/26/2024 1:58:40 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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Part NO. : SI9926BDY-T1-E3

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SI9926BDYT1E3

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Part NO. : SI9926BDY-T1-E3  

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Part NO. : SI9926BDY-T1-E3

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Qty : 180
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Part NO. : SI9926BDY-T1-E3  

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This is a cached page collected on 2/26/2024 1:58:40 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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