Part Number: | SIA477EDJTT1GE3 |
Product Name: | SIA477EDJTT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIA477EDJTT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 12V 12A SC70-6 |
Series: | TrenchFET Gen III |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 3050pF @ 6V |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 19W (Tc) |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 5A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK SC-70-6 Single |
Package / Case: | PowerPAK SC-70-6 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay Semiconductors
Date Code : 19
Qty : 6000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 3155
USD 0
Part NO. : SiA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 55200
USD 0
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 42580
USD 0
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 19+
Qty : 1000
USD 0
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 3155
USD 0
Part NO. : SiA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 55200
USD 0
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 42580
USD 0
Part NO. : SIA477EDJT-T1-GE3
Brand : Vishay
Date Code : 19+
Qty : 1000
USD 0