| Part Number: | SIHB12N65EGE3 |
| Product Name: | SIHB12N65EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB12N65EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 650V 12A D2PAK |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1224pF @ 100V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 156W (Tc) |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
Part NO. : SIHB12N65E-GE3
Brand : VISHAY/
Date Code :
Qty : 10100
USD 0
Part NO. : SIHB12N65E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 1000
USD 0
Part NO. : SIHB12N65E-GE3
Brand : VISHAY
Date Code : 10+
Qty : 25
USD 0
Part NO. : SIHB12N65E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 50
USD 0
Part NO. : SIHB12N65E-GE3
Brand : VISHAY
Date Code : 22+
Qty : 6000
USD 0
Part NO. : SIHB12N65E-GE3
Brand : VISHAY/
Date Code :
Qty : 10100
USD 0
Part NO. : SIHB12N65E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 1000
USD 0
Part NO. : SIHB12N65E-GE3
Brand : VISHAY
Date Code : 10+
Qty : 25
USD 0
Part NO. : SIHB12N65E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 50
USD 0
Part NO. : SIHB12N65E-GE3
Brand : VISHAY
Date Code : 22+
Qty : 6000
USD 0
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