| Part Number: | SIHH26N60ET1GE3 |
| Product Name: | SIHH26N60ET1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHH26N60ET1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 600V 25A POWERPAK8X8 |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2815pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 202W (Tc) |
| Rds On (Max) @ Id, Vgs: | 135 mOhm @ 13A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK 8 x 8 |
| Package / Case: | 8-PowerTDFN |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SIHH26N60E-T1-GE3
Brand : HVM
Date Code : 21
Qty : 30000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SIHH26N60E-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 46000
USD 0
Part NO. : SIHH26N60E-T1-GE3
Brand : HVM
Date Code : 21
Qty : 30000
USD 0
Part NO. : SIHH26N60E-T1-GE3
Brand : VISH
Date Code : 1611
Qty : 320
USD 0
Part NO. : SIHH26N60E-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 46000
USD 0
Part NO. : SIHH26N60E-T1-GE3
Brand : HVM
Date Code : 21
Qty : 30000
USD 0
Part NO. : SIHH26N60E-T1-GE3
Brand : VISH
Date Code : 1611
Qty : 320
USD 0
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