| Part Number: | SIHJ6N65ET1GE3 |
| Product Name: | SIHJ6N65ET1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHJ6N65ET1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 650V POWERPAK SO-8L |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 596pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 74W (Tc) |
| Rds On (Max) @ Id, Vgs: | 868 mOhm @ 3A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK SO-8 |
| Package / Case: | PowerPAK SO-8 |
Part Number
Brand
D/C
Qty
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 46000
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : ORIGINAL
Date Code : 22+
Qty : 5415
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand :
Date Code : 22+
Qty : 7800
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay
Date Code : 21+
Qty : 9886
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 46000
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : ORIGINAL
Date Code : 22+
Qty : 5415
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand :
Date Code : 22+
Qty : 7800
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIHJ6N65E-T1-GE3
Brand : Vishay
Date Code : 21+
Qty : 9886
USD 0
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