Part Number: | SIS612EDNTT1GE3 |
Product Name: | SIS612EDNTT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIS612EDNTT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 20V 50A SMT |
Series: | TrenchFET |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 10V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 14A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK 1212-8 |
Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code :
Qty : 37409
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code : 19+
Qty : 18875
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 16389
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code : 17+
Qty : 320
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code :
Qty : 37409
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code : 19+
Qty : 18875
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 16389
USD 0
Part NO. : SIS612EDNT-T1-GE3
Brand : VISHAY
Date Code : 17+
Qty : 320
USD 0