Part Number: | SIS888DNT1GE3 |
Product Name: | SIS888DNT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIS888DNT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 150V 20.2A 1212-8S |
Series: | ThunderFET |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Vgs(th) (Max) @ Id: | 4.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 75V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 52W (Tc) |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 10A, 10V |
Operating Temperature: | -55°C ~ 150°C (TA) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK 1212-8S (3.3x3.3) |
Package / Case: | PowerPAK 1212-8S |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY
Date Code : 16
Qty : 3000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY
Date Code :
Qty : 32841
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY/
Date Code :
Qty : 32826
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 32826
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY
Date Code : 16+
Qty : 6037
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY
Date Code :
Qty : 32841
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY/
Date Code :
Qty : 32826
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 32826
USD 0
Part NO. : SIS888DN-T1-GE3
Brand : VISHAY
Date Code : 16+
Qty : 6037
USD 0