| Part Number: | SIS892DNT1GE3 |
| Product Name: | SIS892DNT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIS892DNT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 100V 30A 1212-8 PPAK |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 611pF @ 50V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs: | 29 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK 1212-8 |
| Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
Part NO. : SIS892DN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 3191
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY/
Date Code :
Qty : 20678
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 20678
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY
Date Code : 20+
Qty : 6036
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 3191
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY/
Date Code :
Qty : 20678
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 20678
USD 0
Part NO. : SIS892DN-T1-GE3
Brand : VISHAY
Date Code : 20+
Qty : 6036
USD 0
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