| Part Number: | TH58BYG2S3HBAI6 |
| Product Name: | TH58BYG2S3HBAI6 Memory |
| Merchant-Specific Identifier: | TH58BYG2S3HBAI6 |
| Category: | Integrated Circuits (ICs) > Memory |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | IC EEPROM 4GBIT 25NS 67FBGA |
| Series: | Benand |
| Packaging: | Non-Volatile |
| Memory Type: | Tray |
| Memory Format: | EEPROM |
| Technology: | EEPROM - NAND |
| Memory Size: | 4Gb (512M x 8) |
| Clock Frequency: | - |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 67-VFBGA |
| Supplier Device Package: | 67-VFBGA (6.5x8) |
Part Number
Brand
D/C
Qty
Part NO. : TH58BYG2S3HBAI6
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 100000
USD 0
Part NO. : TH58BYG2S3HBAI6
Brand : Kioxia America
Date Code : 2022
Qty : 346000
USD 0
Part NO. : TH58BYG2S3HBAI6
Brand : TOSHIBAMEMORYAMERICAINC
Date Code :
Qty : 11001
USD 0
Part NO. : TH58BYG2S3HBAI6
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 100000
USD 0
Part NO. : TH58BYG2S3HBAI6
Brand : Kioxia America
Date Code : 2022
Qty : 346000
USD 0
Part NO. : TH58BYG2S3HBAI6
Brand : TOSHIBAMEMORYAMERICAINC
Date Code :
Qty : 11001
USD 0
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