| Part Number: | TK7E80WS1X |
| Product Name: | TK7E80WS1X Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK7E80WS1X |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 800V 6.5A TO220-3 |
| Series: | DTMOSIV |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 300V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3.3A, 10V |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : TK7E80W,S1X
Brand : TOSHIBA/东芝
Date Code : 19+
Qty : 50000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 1000
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7E80W,S1X
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 1000
USD 0
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