| Part Number: | TK7J90ES1E |
| Product Name: | TK7J90ES1E Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK7J90ES1E |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 900V TO-3PN |
| Series: | 蟺-MOSVIII |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 200W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 3.5A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3P(N) |
| Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
Part NO. : TK7J90ES1E
Brand : TOSHIBA/
Date Code :
Qty : 10012
USD 0
Part NO. : TK7J90E,S1E
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TK7J90E,S1E
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7J90E,S1E(S
Brand : TOSHIBA
Date Code : 22+
Qty : 4200
USD 0
Part NO. : TK7J90ES1E
Brand : TOSHIBA/
Date Code :
Qty : 10012
USD 0
Part NO. : TK7J90E,S1E
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TK7J90E,S1E
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TK7J90E,S1E(S
Brand : TOSHIBA
Date Code : 22+
Qty : 4200
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
