| Part Number: | TPN2R503NCL1Q |
| Product Name: | TPN2R503NCL1Q Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TPN2R503NCL1Q |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N CH 30V 40A 8TSON-ADV |
| Series: | U-MOSVIII |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.3V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2230pF @ 15V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta), 35W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 20A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 1000
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : TOSHIBA
Date Code : 22+
Qty : 55300
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : TPN2R503NC,L1Q
Brand :
Date Code :
Qty : 2000
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 1000
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 1000
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : TOSHIBA
Date Code : 22+
Qty : 55300
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : TPN2R503NC,L1Q
Brand :
Date Code :
Qty : 2000
USD 0
Part NO. : TPN2R503NC,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 1000
USD 0
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