【ZXMP6A17DN8TA DIODES】Buy Now【ZXMP6A18DN8TA】【ZXMN6A25DN8TA】【Price】Electronic Components Stock in USA 2020【Datasheet】【PDF】 HKIN20171020MDPartDetails HGCacheDateZOZOIOEI

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Part Number:

ZXMP6A17DN8TA
Category:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Brand:

Diodes Incorporated
Description:

MOSFET 2P-CH 60V 2.7A 8-SOIC
Series:

-
Packaging:

Tape & Reel (TR)
FET Type:

2 P-Channel (Dual)
FET Feature:

Logic Level Gate
Drain to Source Voltage (Vdss):

60V
Current - Continuous Drain (Id) @ 25°C:

2.7A
Rds On (Max) @ Id, Vgs:

125 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:

1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:

17.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:

637pF @ 30V
Power - Max:

1.81W
Operating Temperature:

-55°C ~ 150°C (TJ)
Mounting Type:

Surface Mount
Package / Case:

8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:

8-SOP

ZXMP6A17DN8TA Description

MOSFET 2P-CH 60V 2.7A 8-SOIC Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 2.7A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A (Min) Gate Charge (Qg) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) @ Vds: 637pF @ 30V Power - Max: 1.81W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO

ZXMP6A18DN8TA Description

MOSFET 2P-CH 60V 3.7A 8-SOIC Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 3.7A Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A (Min) Gate Charge (Qg) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) @ Vds: 1580pF @ 30V Power - Max: 1.8W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO

ZXMN6A25DN8TA Description

MOSFET 2N-CH 60V 3.8A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 3.8A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A (Min) Gate Charge (Qg) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) @ Vds: 1063pF @ 30V Power - Max: 1.8W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
1 - 15 of 15 Record(s)
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Highest: $16.95
Hot Offer
 Part NumberBrandD/CQtyPrice(USD)Company

ZXMP6A18DN8TA

DIODES20185005.43Blue star electronics Co.,Limited    3

ZXMP6A17DN8TA, ZXMP6A18DN8TA, ZXMN6A25DN8TA
 Part NumberBrandD/CQtyPrice(USD)Company
Warranty

ZXMP6A17DN8TA

DIODES14500.67SUNTOP SEMICONDUCTOR CO., LIMITED    6

ZXMP6A17DN8TA

ZETEX5002.12Yu Hong Technologies Limited    4

ZXMP6A17DN8TA
 

ZTX16+10003.16TOP-Q COMPONENT PTE. LTD    7
Warranty

ZXMP6A17DN8TA

DIODES10003.33ONSTAR ELECTRONICS CO., LIMITED    5

ZXMP6A17DN8TA

15+15005.22HK SEN YING TAI TECHNOLOGY CO., LIMITED   3
Warranty

ZXMP6A18DN8TA

DIODES10007.22ONSTAR ELECTRONICS CO., LIMITED    5
STRC

ZXMP6A18DN8TA
 

DIODES5008.86Yu Hong Technologies Limited    4

ZXMP6A18DN8TA

DIODES2018+1500010.74Bonase Electronics (HK) Co., Limited    14

ZXMP6A18DN8TA

Diodes Incorporated1500011.42MY Group (Asia) Limited   15
Warranty

ZXMN6A25DN8TA

DIODES131512.74SUNTOP SEMICONDUCTOR CO., LIMITED    6
Warranty

ZXMN6A25DN8TA

DIODES100013.37ONSTAR ELECTRONICS CO., LIMITED    5

ZXMN6A25DN8TA

ZETEX2015+2014.65Bonase Electronics (HK) Co., Limited    14
STRC

ZXMN6A25DN8TA
 

DIODES50015.33Yu Hong Technologies Limited    4

ZXMN6A25DN8TA

Diodes Incorporated800016.95MY Group (Asia) Limited   15

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ZXMP6A18DN8TA | ZXMN6A25DN8TA | ZXMN6A25DN8TA | ZXMP3A16DN8TA | ZXMP3A17DN8TA | ZXMP3F37DN8TA | ZXMP6A16DN8TA | ZXMP6A16DN8TC | ZXMP6A18DN8TA
ZXMP6A17DN8TA Ref.:
[hkinbatch20200720]
[HGCacheDateZOZOIOEI]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]
[HKIN20200130LANG_EN]

ZXMP6A17DN8TA Related Keywords in 2020 USA

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