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【BSS214NW Transistors - FETs, MOSFETs - Single I】【E2EX3D1M1JT1N】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Infineon Technologies


MOSFET N-CH 20V 1.5A SOT-323




Tape & Reel (TR)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

1.2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs:

0.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

143pF @ 10V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

500mW (Ta)

Rds On (Max) @ Id, Vgs:

140 mOhm @ 1.5A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:

SC-70, SOT-323

Search For BSS214NW - BSS214NW Product Information : 

1 - 10 of 10 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /


BSS214NW I16+36213China
Ande Electronics Co., Limited  12

BSS214NW H6327

BSS214NW H6327 Infineon20850China
Hong Kong In Fortune Electronics Co., Limited  13

BSS214NW H6327

BSS214NW H6327 Infineon16550Hong Kong
C & I Semiconductors Co., Limited  8

BSS214NW H6327

BSS214NW H6327 INFINEON2000France
FantastIC Sourcing 13


BSS214NW 14+31932China
International Smart Trading Limited 4

E2E-X3D1-M1J-T1N 0.3M

E2E-X3D1-M1J-T1N 0.3M Omron05+550China
Dopoint Hi-Tech Limited  13


E2E-X3D1 OMRON16+13569China
Ande Electronics Co., Limited  12


E2E-X3D1 OMRON13+80000China
Hitsem International Electronics Co.,Limited 13


E2E-X3D1 OMRON2015+1000China
Bonase Electronics (HK) Co., Limited  12


E2E-X3D1-M1 49China
Yaspro Electronics (Shanghai) Co., Ltd  2

Buy: BSS214NW, E2EX3D1M1JT1N
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BSS214NW related keywords in 2018 United States

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