Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 22A POWER56
Cut Tape (CT)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
16A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
3V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1885pF @ 15V
Power Dissipation (Max):
2.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs:
6.3 mOhm @ 14A, 10V
-55Â°C ~ 150Â°C (TJ)
Supplier Device Package:
8-PQFN (5x6), Power56
Package / Case:
Search For FDMS7682 - FDMS7682 Product Information :
FDMS7682 FDMS7682 . FDMS7682 . PQFN-8. (TFSnCuBW). Jul 07, 2016. 1.0. GEM. 0.105957 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Product Overview. FDMS7682 : 30V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS7682 . Feb 16, 2009 Notes: a. Based on TC = 25 C. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). 2012 3 31 FDMS7682 . 4. 1. 5. 3 2. 6789. 1. C329. 0.1uF 16V. 1. C615. 10uF 6.3V. 2. 1. L6. 3.3UH 30%2.6A100mohm. 1. C308. 1uF 6.3V. 1. C326. 1uF 6.3 ...
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