【IRF3502 IR】【BCT3415S】【M85049/2412N】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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IRF3502 Description

Nov 17, 1997 Page 1. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 5.0V. 110 . ID @ TC = 100 C. Continuous Drain Page 1. 11/18/97. IRL3502S. PRELIMINARY. HEXFET Power MOSFET. PD - 9.1676A. These HEXFET Power MOSFETs were designed specifically to meet the Page 1. IR3502A. Page 1 of 38. December 17, 2009. DATA SHEET. XPHASE3. TM CONTROL IC. DESCRIPTION. The IR3502A control IC combined with Page 1. Semiconductor Components Industries, LLC, 2012. Augsut, 2012 Rev. 1. 1. Publication Order Number: NTB5860NL/D. NTB5860NL Page 1. IRF3205. HEXFET Power MOSFET. 01/25/01. Absolute Maximum Ratings. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS.
IRF3502, BCT3415S, M85049/2412N
 Part NumberBrandD/CQtyCompany


IR3340Belt (HK) Electronics Co    11


IR1227Sinno Electronics Co., Limited    8




isc/iscsemi2017+2000Inchange Semiconductor Company Limited   2





M 85049 38 09W

AMPHENOL50Compona AG   9


AERO20161000Shenzhen KHS Electronics Company   14


Glenair Inc3Hi-tech (HK) Electronics Co.,Ltd    2


GLEN18Yu Hong Technologies Limited   2


GLENAIR4DF Sales Co   1

Related Part Number

BCT3415S | M85049/2412N | IRF3450 | IRF350 | IRF350 | IRF3502PBF | IRF3505 | IRF350C | IRF350CECC | IRF350K | IRF350R
IRF3502 Ref.:

IRF3502 Related Keywords in 2017 USA

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