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【IRF7910PBF】【IOR】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 12V 10A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 10A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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IRF7910PbF

IRF7910PbF  IOR SOP-8 4195China
Belt (HK) Electronics Co E-Catalog 11th Year Member

IRF7910PBF

IRF7910PBF  IR 1402 180China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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IRF7910PBF

IRF7910PBF  International R... 11124Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IRF7910PBF

IRF7910PBF  IR 2015+ 5299China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

IRF7910PbF

IRF7910PbF  IOR 4195China
Nosin (HK) Electronics Co. E-Catalog 12th Year Member

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MOSFET 2N-CH 12V 10A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 10A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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