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IRF9024 Dec 14, 2004 dv/dt controlled by RG. ISD controlled by Duty Factor D. D.U.T. - Device Under Test. Circuit Layout Considerations. Low Stray Inductance. Oct 27, 2004 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105. TAC Fax: (310) 252-7903. Visit us at Jun 26, 1997 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -11. ID @ TC = 100 C. Continuous Drain Current, VGS @ - on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead Oct 20, 2015 Description. Specifically designed for Automotive applications, this Cellular design of HEXFET . Power MOSFETs utilizes the latest processing ...
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