Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 600V 2.2A TO-220AB
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
4V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
4.4 Ohm @ 1.3A, 10V
-55Â°C ~ 150Â°C (TJ)
Supplier Device Package:
Package / Case:
Search For IRFBC20 - IRFBC20 Product Information :
IRFBC20 DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Surface Mount (IRFBC20S, SiHFBC20S). Low-Profile Through-Hole (IRFBC20L , SiHFBC20L). Available in Tape and Reel ( IRFBC20 , SiiHFBC20S). Apr 30, 2015 IRS2186(4)(S)PBF. 17 www.irf.com 2015 International Rectifier. April 30, 2015. Figure 21. IRS2186 vs. Frequency ( IRFBC20 ). Rgate = 33 Jun 23, 2008 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 860. mJ. IAR. Avalanche Current . 5.6. A. EAR. Repetitive ...
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