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【IXFH12N100P】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFH12N100P

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 1000V 12A TO-247

Series:

HiPerFET, PolarP2

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

80nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4080pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

463W (Tc)

Rds On (Max) @ Id, Vgs:

1.05 Ohm @ 6A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD (IXFH)

Package / Case:

TO-247-3

Search For IXFH12N100P - IXFH12N100P Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IXFH12N100P

IXFH12N100P  IXYS 2015+TO-247 20000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IXFH12N100P

IXFH12N100P  IXYS TO-247 3389China
Belt (HK) Electronics Co E-Catalog 11th Year Member

IXFH12N100P

IXFH12N100P  3389China
Nosin (HK) Electronics Co. E-Catalog 12th Year Member

IXFH120N20P

IXFH120N20P  IXYS TO-247 3342China
Belt (HK) Electronics Co E-Catalog 11th Year Member

IXFH12N100

IXFH12N100  IXYS 2016+ 18000China
MY Group (Asia) Limited E-Catalog 13th Year Member

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