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【PBLS4003V115】【Transistors - Bipolar (BJT) - Arrays, Pre-Biased】【NXP USA INC.】【NXP】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased









Transistor Type:

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max):

50V, 40V

Resistor - Base (R1) (Ohms):


Resistor - Emitter Base (R2) (Ohms):


DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V / 150 @ 100mA. 2V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

Current - Collector Cutoff (Max):


Frequency - Transition:


Power - Max:


Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:


Search For PBLS4003V115 - PBLS4003V115 Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /


PBLS4003V,115  NXP USA Inc. 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member


PBLS4003V,115  NXP 4100UK
Merefield's Electronics Ltd. E-Catalog 12th Year Member


PBLS4003V,115  NXP 11+IC 2700China
Dopoint Hi-Tech Limited E-Catalog 13th Year Member


PBLS4003V,115  18+ 200000China
Jealasentec(HK) Semiconductors Co.,Limited E-Catalog 1st Year Member


PBLS4003Y  NXP 2018+SC-70-6 42000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

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