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【SI3434DVT1GE3】【Transistors - FETs, MOSFETs - Single】【VISHAY】【VISHAY SILICONIX】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

SI3434DVT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 4.6A 6-TSOP

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

600mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

1.14W (Ta)

Rds On (Max) @ Id, Vgs:

34 mOhm @ 6.1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Search For SI3434DVT1GE3 - SI3434DVT1GE3 Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
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SI3434DV-T1-GE3

SI3434DV-T1-GE3  VISHAY 14+SOT-23- 38000China
Ande Electronics Co., Limited E-Catalog 12th Year Member

SI3434DV-T1-GE3

SI3434DV-T1-GE3  Vishay Siliconi... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

SI3434DV-T1-GE3

SI3434DV-T1-GE3  VISHAY 13+SOT23-6 4000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 15th Year Member

SI3434DV-T1-GE3

SI3434DV-T1-GE3  16+SOT23-6 15000China
Yu Hong Technologies Limited E-Catalog 2nd Year Member

SI3434DV-T1-GE3

SI3434DV-T1-GE3  17+ 28000China
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED E-Catalog 1st Year Member

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